IRF7404TRPBF International Rectifier, IRF7404TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7404TRPBF
• Description: MOSFET P-CH 20V 6.7A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7404TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 3.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.7A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1500pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.04Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Continuous Drain Current: 6.7A
• Power Dissipation: 2.5W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 40 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Mounting Style: SMD/SMT
• Gate Charge Qg: 33.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7404PBFTR

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100
8.0
6.0
4.0
2.0
0.0
0.1
10
0.0001
1
25
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.001
SINGLE PULSE
75
100
0.01
125
t , Rectangular Pulse Duration (sec)
°
1
150
0.1
V
90%
10%
V
DS
GS
R
Pulse Width ≤ 1µs
Duty Factor ≤ 0.1%
G
-4.5V
t
V
d(on)
1. Duty factor D = t / t
2. Peak T = P
GS
Notes:
1
V
DS
t
r
J
DM
D.U.T.
x Z
1
thJA
P
2
R
10
DM
D
t
d(off)
+ T
A
t
1
t
f
t
2
-
+
V
DD
A
100
5