IRF7807ZTRPBF International Rectifier, IRF7807ZTRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7807ZTRPBF
• Description: MOSFET N-CH 30V 11A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7807ZTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.8 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 770pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 18.2 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 7.2 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7807ZPBFTR; IRF7807ZTRPBF; IRF7807ZTRPBFTR

www.irf.com
0.001
0.01
100
0.1
10
12
10
Fig 9. Maximum Drain Current Vs.
1
8
6
4
2
0
1E-006
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
Case Temperature
0.20
0.10
0.05
0.02
0.01
T J , Junction Temperature (°C)
50
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
75
0.0001
100
125
t 1 , Rectangular Pulse Duration (sec)
0.001
150
0.01
Fig 10. Threshold Voltage Vs. Temperature
τ
J
τ
J
τ
2.2
2.0
1.8
1.6
1.4
1.2
1.0
1
Ci= τi/Ri
τ
1
Ci= i/Ri
-75
R
1
R
1
-50
0.1
τ
2
τ
R
-25
2
2
R
2
T J , Temperature ( °C )
0
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
R
τ
3
3
R
τ
3
3
1
25
τ
C
τ
Ri (°C/W)
5.770
24.37
19.86
50
I D = 250µA
75
10
100
7.25
0.002691
0.54585
τi (sec)
125
5
150
100