IRF8714TRPBF International Rectifier, IRF8714TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF8714TRPBF
• Description: MOSFET N-CH 30V 14A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF8714TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.7 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 12nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1020pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 14 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 8.1 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF8714TRPBFTR

www.irf.com
0.001
14
12
10
0.01
100
8
6
4
2
0
0.1
10
1E-006
1
25
Fig 9. Maximum Drain Current vs.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
T A , Ambient Temperature (°C)
50
Ambient Temperature
0.10
0.02
0.20
0.05
0.01
τ
J
τ
J
τ
1E-005
1
Ci= τi/Ri
τ
1
Ci= τi/Ri
75
R
1
R
1
τ
2
100
τ
R
0.0001
2
2
R
2
SINGLE PULSE
( THERMAL RESPONSE )
R
τ
3
3
R
τ
125
3
3
t 1 , Rectangular Pulse Duration (sec)
τ
0.001
R
4
τ
4
R
4
4
150
τ
A
τ
A
Ri (°C/W) τi (sec)
1.9778
7.4731
26.2617
14.2991
0.01
Fig 10. Threshold Voltage vs. Temperature
2.5
2.0
1.5
1.0
0.000165
0.022044
0.82275
28.4
-75 -50 -25
0.1
I D = 25µA
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
T J , Temperature ( °C )
0
25
1
50
75 100 125 150
10
5
100