IRLML6302TRPBF International Rectifier, IRLML6302TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRLML6302TRPBF
• Description: MOSFET P-CH 20V 780MA SOT-23
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML6302TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 600 mOhm @ 610mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 780mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 3.6nC @ 4.45V
• Input Capacitance (ciss) @ Vds: 97pF @ 15V
• Power - Max: 540mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Channel Type: P
• Current, Drain: –0.8 A
• Gate Charge, Total: 2.4 nC
• Package Type: MICRO-3
• Polarization: P-Channel
• Power Dissipation: 0.5 W
• Resistance, Drain To Source On: 0.6 Ohm
• Resistance, Thermal, Junction To Case: 230 °C/W
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 22 ns
• Time, Turn-on Delay: 13 ns
• Transconductance, Forward: 0.56 S
• Voltage, Breakdown, Drain To Source: -20 V
• Voltage, Drain To Source: –20 V
• Voltage, Forward, Diode: -1.2 V
• Voltage, Gate To Source: ±12 V
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 600 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 0.62 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 2.4 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLML6302PBFTR

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0.01
0.1
10
180
160
140
120
100
1
80
60
40
20
0.4
0
T = 150°C
1
J
-V
C
C
C
-V
0.6
iss
oss
rss
SD
DS
, Source-to-Drain Voltage (V)
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
= 0V,
= C
= C
= C
0.8
T = 25°C
J
gs
ds
gd
+ C
+ C
10
gd
1.0
gd
f = 1MHz
, C
ds
1.2
SHORTED
V
GS
= 0V
1.4
100
A
A
0.1
10
10
1
8
6
4
2
0
0.0
1
T
T
Single Pulse
I
V
D
A
J
DS
= -0.61A
= 25°C
= 150°C
= -16V
-V
OPERATION IN THIS AREA LIMITED
DS
Q , Total Gate Charge (nC)
1.0
G
, Drain-to-Source Voltage (V)
BY R
2.0
10
DS(on)
FOR TEST CIRCUIT
SEE FIGURE 9
100µs
1ms
10ms
3.0
4
100
4.0
A
A