IRLML6302TRPBF International Rectifier, IRLML6302TRPBF Datasheet - Page 4
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IRLML6302TRPBF
Manufacturer Part Number
IRLML6302TRPBF
Description
MOSFET P-CH 20V 780MA SOT-23
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRLML6302TRPBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
600 mOhm @ 610mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
780mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
3.6nC @ 4.45V
Input Capacitance (ciss) @ Vds
97pF @ 15V
Power - Max
540mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Channel Type
P
Current, Drain
–0.8 A
Gate Charge, Total
2.4 nC
Package Type
MICRO-3
Polarization
P-Channel
Power Dissipation
0.5 W
Resistance, Drain To Source On
0.6 Ohm
Resistance, Thermal, Junction To Case
230 °C/W
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
22 ns
Time, Turn-on Delay
13 ns
Transconductance, Forward
0.56 S
Voltage, Breakdown, Drain To Source
-20 V
Voltage, Drain To Source
–20 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate To Source
±12 V
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
600 mOhms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 0.62 A
Mounting Style
SMD/SMT
Gate Charge Qg
2.4 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRLML6302PBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRLML6302TRPBF
Manufacturer:
IR
Quantity:
24 000
Company:
Part Number:
IRLML6302TRPBF
Manufacturer:
IR
Quantity:
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Part Number:
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Manufacturer:
IR
Quantity:
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Part Number:
IRLML6302TRPBF-1
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRLML6302TRPBF/C3K
Manufacturer:
IR
Quantity:
20 000
www.irf.com
0.01
0.1
10
180
160
140
120
100
1
80
60
40
20
0.4
0
T = 150°C
1
J
-V
C
C
C
-V
0.6
iss
oss
rss
SD
DS
, Source-to-Drain Voltage (V)
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
= 0V,
= C
= C
= C
0.8
T = 25°C
J
gs
ds
gd
+ C
+ C
10
gd
1.0
gd
f = 1MHz
, C
ds
1.2
SHORTED
V
GS
= 0V
1.4
100
A
A
0.1
10
10
1
8
6
4
2
0
0.0
1
T
T
Single Pulse
I
V
D
A
J
DS
= -0.61A
= 25°C
= 150°C
= -16V
-V
OPERATION IN THIS AREA LIMITED
DS
Q , Total Gate Charge (nC)
1.0
G
, Drain-to-Source Voltage (V)
BY R
2.0
10
DS(on)
FOR TEST CIRCUIT
SEE FIGURE 9
100µs
1ms
10ms
3.0
4
100
4.0
A
A