RK3055ETL Rohm Semiconductor, RK3055ETL Datasheet - Page 3

• Manufacturer Part Number: RK3055ETL
• Description: MOSFET N-CH 60V 8A DPAK
• Manufacturer: Rohm Semiconductor

Specifications of RK3055ETL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 150 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Input Capacitance (ciss) @ Vds: 520pF @ 10V
• Power - Max: 20W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Cpt3: N-CHAN
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 150mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8 A
• Power Dissipation: 20000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: RK3055ETL; RK3055ETLTR

Transistors
Fig.7 Static Drain-Source On-State Resistance
Fig.9
1000
0.05
500
200
100
0.5
0.2
0.1
50
20
10
10
0.05
Fig.13 Switching Characteristics
5
2
0.3
0.2
0.1
5
2
1
vs. Gate-Source Voltage
0
Fig.10 Reverse Drain Current
Fig.14
0
V
Pulsed
SOURCE-DRAIN VOLTAGE : V
GS
0.1
Ta=125°C
GATE-SOURCE VOLTAGE : V
=0V
(See Figures 16 and 17 for
the measurement circuit
and resultant waveforms)
DRAIN CURRENT : I
−25°C
vs. Source-Drain Voltage ( Ι )
0.2
75°C
25°C
5
0.5
0.5
10
1
t
t
d(off)
t
t
d(on)
f
r
I
D
=5A
1.0
2
D
(A)
Ta=25°C
V
V
R
Pulsed
2.5A
15
DD
GS
G
=10Ω
Ta=25°C
SD
=30V
=10V
Pulsed
GS
5
(V)
(V)
10
1.5
20
Fig.8 Static Drain-Source On-State Resistance
Fig.9
0.05
0.01
1000
0.5
0.1
500
100
50
10
5
1
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
Fig.11 Reverse Drain Current
Fig.14
0
−50
vs. Channel Temperature
di/dt=50A/µs
V
Ta=25°C
Pulsed
Fig.14 Reverse Recovery Time
Fig.14
REVERSE DRAIN CURRENT : I
GS
SOURCE-DRAIN VOLTAGE : V
CHANNEL TEMPERATURE : Tch
=0V
−25
0.2
V
vs. Source-Drain Voltage ( ΙΙ )
GS
vs. Reverse Drain Current
=10V
0
0.5
0.5
I
D
=5A
25
1
50
2.5A
0V
1.0
75 100 125 150
2
T a =25°C
Pulsed
SD
DR
V
Pulsed
GS
(V)
5
(A)
= 10V
(°C)
1.5
10
10000
5000
2000
1000
100
500
200
100
0.5
0.2
0.1
50
20
10
50
20
10
0.1 0.2
5
2
1
0.01 0.02 0.05
Fig.9 Forward Transfer Admittance
Fig.9
Fig.12 Typical Capacitance
Fig.14
V
Pulsed
DS
DRAIN-SOURCE VOLTAGE : V
= 15V
vs. Drain Current
0.5
DRAIN CURRENT : I
Ta = −25°C
vs. Drain-Source Voltage
0.1 0.2
1
125°C
25°C
75°C
Rev.B
2
RK3055E
0.5
5
10 20
1
D
2.0
(A)
Ta = 25°C
V
Pulsed
f = 1MHz
GS
DS
= 0V
(V)
50 100
5.0 10
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