RTL030P02TR Rohm Semiconductor, RTL030P02TR Datasheet - Page 4
![MOSFET P-CH 20V 3A TUMT6](/photos/5/48/54853/rtl030p02tr_sml.jpg)
RTL030P02TR
Manufacturer Part Number
RTL030P02TR
Description
MOSFET P-CH 20V 3A TUMT6
Manufacturer
Rohm Semiconductor
Datasheet
1.RTL030P02TR.pdf
(5 pages)
Specifications of RTL030P02TR
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
70 mOhm @ 3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
8nC @ 4.5V
Input Capacitance (ciss) @ Vds
760pF @ 10V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
TUMT6
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.07 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
3 A
Power Dissipation
1000 mW
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RTL030P02TR
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
! ! ! ! Measurement circuits
Fig.12 Gate Charge Measurement Circuit
Fig.10 Switching Time Measurement Circuit
I
G(Const)
R
R
G
G
V
V
GS
GS
D.U.T.
D.U.T.
I
I
D
D
R
R
V
V
L
L
DD
DD
V
V
DS
DS
V
V
GS
DS
V
t
d(on)
GS
Fig.13 Gate Charge Waveforms
V
Fig.11 Switching Waveforms
G
Q
gs
10%
t
50%
on
90%
Pulse Width
t
10%
r
Q
gd
Q
g
90%
RTL030P02
t
d(off)
t
Charge
off
50%
t
90%
r
10%
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