QS5U17TR Rohm Semiconductor, QS5U17TR Datasheet - Page 3
![MOSFET N-CH 30V 2A TSMT5](/photos/5/48/54817/tsmt5_tsmt5_pkg_sml.jpg)
QS5U17TR
Manufacturer Part Number
QS5U17TR
Description
MOSFET N-CH 30V 2A TSMT5
Manufacturer
Rohm Semiconductor
Datasheet
1.QS5U17TR.pdf
(5 pages)
Specifications of QS5U17TR
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
100 mOhm @ 2A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
1.5V @ 1mA
Gate Charge (qg) @ Vgs
3.9nC @ 4.5V
Input Capacitance (ciss) @ Vds
175pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
TSMT5
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohm @ 4.5 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
2 A
Power Dissipation
1250 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
QS5U17TR
Manufacturer:
ATMEL
Quantity:
165
Transistors
<MOSFET>
Electrical characteristic curves
0.001
1000
0.01
0.01
100
0.1
0.1
10
10
Fig.4 Static Drain-Source On-State
10
1
0.1
1
0.0
Fig.1 Typical Transfer Characteristics
0.0
Fig.7 Reverse Drain Current
SOURCE-DRAIN VOLTAGE : V
GATE-SOURCE VOLTAGE : V
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Resistance vs. Drain Current
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.5
DRAIN CURRENT : I
vs. Source-Drain Current
0.5
1.0
1
1.5
1.0
D
V
Pulsed
V
Pulsed
2.0
(A)
GS
DS
V
Pulsed
GS
=2.5V
=10V
GS
SD
=0V
(V)
(V)
2.5
10
1.5
1000
1000
300
200
100
100
100
Fig.2 Static Drain-Source On-State
10
10
0
0.1
0.01
0
Fig.5 Static Drain-Source
Fig.8 Typical Capacitance
I
D
=1A
GATE-SOURCE VOLTAGE : V
DRAIN-SOURCE VOLTAGE : V
1
Resistance vs. Drain Current
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
DRAIN CURRENT : I
2
On-State Resistance vs.
Gate-Source Voltage
vs. Drain-Source Voltage
0.1
3
I
D
=2A
4
1
5
1
6
7
D
10
V
Pulsed
Ta=25°C
Pulsed
(A)
Ta=25°C
f=1MHz
V
GS
8
GS
GS
=4.5V
DS
=0V
9
(V)
C
C
C
(V)
iss
oss
rss
10
10
100
1000
1000
100
100
1000
Fig.3 Static Drain-Source On-State
10
10
Fig.6 Static Drain-Source On-State
100
0.1
10
0.1
1
0.01
Fig.9 Switching Characteristics
t
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Resistance vs. Drain Current
d (off)
Resistance vs. Drain Current
DRAIN CURRENT : I
DRAIN CURRENT : I
DRAIN CURRENT : I
t
t
d (on)
0.1
f
t
Rev.B
r
V
V
V
GS
GS
GS
1
1
=2.5V
=4V
=4.5V
QS5U17
1
D
D
V
Pulsed
Ta=25°C
Pulsed
D
(A)
(A)
GS
Ta=25°C
V
V
R
Pulsed
(A)
DD
GS
G
=4.0V
=10Ω
=15V
=4.5V
3/4
10
10
10