SI2302-TP Micro Commercial Components (MCC), SI2302-TP Datasheet - Page 3

• Manufacturer Part Number: SI2302-TP
• Description: MOSFET N-CH 20V 3A SOT-23
• Manufacturer: Micro Commercial Components (MCC)

Specifications of SI2302-TP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 72 mOhm @ 3.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.2V @ 50µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 237pF @ 10V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: SOT-23
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 110 mOhms
• Forward Transconductance Gfs (max / Min): 8.5 S
• Drain-source Breakdown Voltage: 20 V
• Continuous Drain Current: 3 A
• Power Dissipation: 1.25 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI2302-TPMSTR

Revision: A
Micro Commercial Components
M C C
600
500
400
300
200
100
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10
8
6
4
2
0
0
-50
0
0
Figure 5. Gate Threshold Variation
V
I
D
Figure 1. Output Characteristics
DS
=250µA
V
V
-25
T
=V
DS
DS
J
, Junction Temperature( C)
5
GS
, Drain-to-Source Voltage (V)
1
, Drain-to-Source Voltage (V)
Figure 3. Capacitance
www.mccsemi.com
0
with Temperature
V
GS
25
=4.5,3.5,2.5V
10
2
50
75
15
3
C iss
C oss
C rss
TM
100
20
4
125
150
25
5
3 of 5
10
10
10
2.2
1.9
1.6
1.3
1.0
0.7
0.4
10
8
6
4
2
0
1
0
-1
Figure 6. Body Diode Forward Voltage
-100
0.2
V
0
Figure 4. On-Resistance Variation
I
V
SD
D
Figure 2. Transfer Characteristics
T
GS
Variation with Source Current
=3.6A
J
V
, Body Diode Forward Voltage (V)
=125 C
T
=4.5V
GS
-50
J
, Junction Temperature( C)
0.4
, Gate-to-Source Voltage (V)
with Temperature
0
1
0.6
SI2302
50
-55 C
0.8
100
2
25 C
1.0
150
200
1.2
3
2011/01/01