RTQ020N03TR Rohm Semiconductor, RTQ020N03TR Datasheet - Page 2

MOSFET N-CH 30V 2A TSMT6

RTQ020N03TR

Manufacturer Part Number
RTQ020N03TR
Description
MOSFET N-CH 30V 2A TSMT6
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of RTQ020N03TR

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
125 mOhm @ 2A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
1.5V @ 1mA
Gate Charge (qg) @ Vgs
3.3nC @ 4.5V
Input Capacitance (ciss) @ Vds
135pF @ 10V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
TSMT6
Configuration
Single Quad Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.125 Ohm @ 4.5 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
2 A
Power Dissipation
1250 mW
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RTQ020N03TR
Manufacturer:
ROHM
Quantity:
38 000
Transistors
∗Pulsed
∗Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Forward voltage
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-drain) (Ta=25°C)
Parameter
Parameter
charge
charge
V
Symbol
Symbol
R
V
(BR) DSS
t
t
C
I
I
C
V
GS (th)
DS (on)
C
d (on)
d (off)
Q
Q
Y
GSS
DSS
Q
t
t
oss
SD
iss
rss
r
gd
fs
f
gs
g
Min.
Min.
0.5
2.0
30
Typ.
Typ.
138
135
2.4
0.5
0.7
89
94
35
25
11
17
8
9
Max.
Max.
125
132
194
1.2
1.5
3.3
10
1
Unit
Unit
mΩ
mΩ
mΩ
µA
µA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
S
V
V
I
V
V
I
I
I
V
V
V
f=1MHz
V
I
V
R
R
V
V
I
I
D
D
D
D
D
D
S
GS
DS
DS
DS
DS
GS
DD
GS
L
G
DD
GS
= 4A, V
= 1mA, V
= 2A, V
= 2A, V
= 2.A, V
= 1A
= 2A
=15Ω
=10Ω
= 30V, V
= 10V, I
= 10V, I
= 10V
=12V, V
=0V
= 4.5V
= 4.5V
15V
15 V
GS
GS
GS
GS
Conditions
Conditions
GS
=0V
D
= 4.5V
= 4V
D
DS
= 2.5V
GS
= 1mA
= 2A
=0V
=0V
=0V
RTQ020N03
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