RUE003N02TL Rohm Semiconductor, RUE003N02TL Datasheet - Page 2

• Manufacturer Part Number: RUE003N02TL
• Description: MOSFET N-CH 20V 300MA EMT3
• Manufacturer: Rohm Semiconductor

Specifications of RUE003N02TL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1 Ohm @ 300mA, 4V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 1V @ 1mA
• Input Capacitance (ciss) @ Vds: 25pF @ 10V
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 700mohm
• Rds(on) Test Voltage Vgs: 4V
• Voltage Vgs Max: 8V
• Transistor Case Style: EMT
• No. Of Pins: 3
• Svhc: No SVHC
• Configuration: Single
• Resistance Drain-source Rds (on): 1 Ohm @ 4 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: RUE003N02TLTR

Transistor
∗ Pulsed
∗ Pulsed
Forward voltage
Static drain-source on-state
resistance
Fig.1 Typical transfer characteristics
Electrical characteristics (Ta=25°C)
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body diode characteristics (Source-drain) (Ta=25°C)
Electrical characteristic curves
0.0001
0.00001
0.001
0.01
0.1
0.0
1
V
Pulsed
DS
GATE-SOURCE VOLTAGE : V
=10V
Parameter
Parameter
0.5
1.0
Ta=125°C
−25°C
75°C
25°C
GS
Symbol
(V)
V
V
Symbol
R
SD
V
(BR)DSS
t
t
I
I
|Y
C
C
C
DS(on)
GS(th)
d(on)
d(off)
1.5
GSS
DSS
∗
t
t
oss
rss
iss
fs
r
f
|
∗
∗
∗
∗
∗
∗
Min.
−
Fig.2 Static drain-source on-state
Min.
400
0.3
20
0.1
−
−
−
−
−
−
−
−
−
−
−
−
10
0.01
1
Typ.
−
resistance vs. drain current (Ι)
Ta=125°C
Typ.
0.7
0.8
1.0
25
10
10
10
15
10
−
−
−
−
−
5
DRAIN CURRENT : I
−25°C
Max.
75°C
25°C
1.2
Max.
1.0
1.0
1.0
1.2
1.4
10
−
−
−
−
−
−
−
−
−
0.1
Unit
V
Unit
ms
µA
µA
pF
pF
pF
ns
ns
ns
ns
I
Ω
Ω
Ω
V
V
S
D
= 100mA, V
(A)
V
Pulsed
GS
V
I
V
V
I
I
I
I
V
V
f=1MHz
I
V
R
R
D
D
D
D
D
D
=4V
GS
DS
DS
DS
GS
GS
L
G
=1mA, V
=300mA, V
=300mA, V
=300mA, V
=300mA, V
=150mA, V
=67Ω
=10Ω
=20V, V
=10V, I
=10V
=±8V, V
=0V
=4.0V
Conditions
1
GS
=0V
Fig.3 Static drain-source on-state
GS
D
DS
GS
0.1
=1mA
10
Conditions
=0V
GS
GS
GS
DS
DD
1
0.01
=0V
=0V
=10V
=4.0V
=2.5V
=1.8V
resistance vs. drain current (ΙΙ)
10V
Ta=125°C
DRAIN CURRENT : I
−25°C
75°C
25°C
RUM003N02
Rev.B
0.1
D
(A)
V
Pulsed
GS
=2.5V
2/3
1