IRFP450 Vishay, IRFP450 Datasheet - Page 8

• Manufacturer Part Number: IRFP450
• Description: MOSFET N-CH 500V 14A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP450

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 2600pF @ 25V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Polarity: N Channel
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): No
• Drain Source On Resistance @ 10v: 400mohm
• Thermal Resistance: 0.65°C/W
• Current Rating: 14A
• Gate-to-drain Charge: 53.3nC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFP450; IRFP450IR

TO-247AC (HIGH VOLTAGE)
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Contour of slot optional.
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
4. Thermal pad contour optional with dimensions D1 and E1.
5. Lead finish uncontrolled in L1.
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154").
7. Outline conforms to JEDEC outline TO-247 with exception of dimension c.
Document Number: 91360
Revision: 15-Sep-08
ECN: S-81920-Rev. A, 15-Sep-08
DWG: 5971
outermost extremes of the plastic body.
DIM.
D1
A1
A2
b1
b2
b3
b4
b5
c1
A
D
b
c
0.10
19.71
13.08
MIN.
4.65
2.21
1.50
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
3
2 x R
5
MILLIMETERS
(2)
2 x b2
R/2
Q
M
L1
3 x b
B
C
C
A
M
1
MAX.
20.70
5.31
2.59
2.49
1.40
1.35
2.39
2.37
3.43
3.38
0.86
0.76
-
2
b4
E
4
E/2
3
2 x e
0.183
0.087
0.059
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
MIN.
S
D
L
INCHES
See view B
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.093
0.135
0.133
0.034
0.030
0.815
-
D D E
A
A1
C
View B
A2
D
A
A
E
C
Ø P1
DIM.
C
Ø P
Ø k
D2
E1
L1
Q
R
E
N
S
e
L
Thermal pad
Ø k
Planting
D2
15.29
13.72
14.20
MIN.
0.51
3.71
3.56
5.31
4.52
M
7
MILLIMETERS
-
Package Information
D
ØP
5.46 BSC
7.62 BSC
5.51 BSC
(c)
B
0.254
M
Section C - C, D - D, E - E
A
View A - A
0.01
MAX.
15.87
16.10
(b1, b3, b5)
(b, b2, b4)
1.30
4.29
3.66
7.39
5.69
5.49
E1
-
4
5
M
D
(Datum B)
B
Vishay Siliconix
M
(4)
ØP1
0.300 BSC
0.020
0.602
0.540
0.559
0.146
0.140
0.209
0.178
MIN.
D1
-
c1
0.215 BSC
0.217 BSC
Base metal
5
INCHES
www.vishay.com
0.010
MAX.
0.051
0.625
0.634
0.169
0.144
0.291
0.224
0.216
-
1