IRFPC50APBF Vishay, IRFPC50APBF Datasheet - Page 3

• Manufacturer Part Number: IRFPC50APBF
• Description: MOSFET N-CH 600V 11A TO-247AC
• Manufacturer: Vishay

Specifications of IRFPC50APBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 580 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 2100pF @ 25V
• Power - Max: 180W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.58 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 7.7 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 180000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 580mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFPC50APBF

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91241
S11-0443-Rev. B, 14-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
100
100
0.1
10
10
1
1
0.1
1
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
TOP
BOTTOM
TOP
BOTTOM
V
V
DS
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
1
10
20μs PULSE WIDTH
T = 25 C
20μs PULSE WIDTH
T = 150 C
J
J
10
4.5V
4.5V
°
This datasheet is subject to change without notice.
°
100
100
Fig. 4 - Normalized On-Resistance vs. Temperature
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
4.0
-60 -40 -20
Fig. 3 - Typical Transfer Characteristics
I =
D
T = 150 C
J
IRFPC50A, SiHFPC50A
13A
V
T , Junction Temperature ( C)
5.0
GS
J
°
, Gate-to-Source Voltage (V)
0
T = 25 C
20 40 60
J
6.0
°
www.vishay.com/doc?91000
Vishay Siliconix
V
20μs PULSE WIDTH
7.0
DS
80 100 120 140 160
= 50V
100V
V
8.0
°
www.vishay.com
GS
=
10V
9.0
3