IRFL9014 Vishay, IRFL9014 Datasheet - Page 2

• Manufacturer Part Number: IRFL9014
• Description: MOSFET P-CH 60V 1.8A SOT223
• Manufacturer: Vishay

Specifications of IRFL9014

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 1.1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 270pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.5 Ohms
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.8 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFL9014

IRFL9014, SiHFL9014
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
www.vishay.com
2
Maximum Junction-to-Ambient
(PCB Mount)
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
DS
SD
DD
Temperature Coefficient
≤ - 6.7 A, dI/dt ≤ 90 A/µs, V
= - 25 V, starting T
a
J
= 25 °C, L = 50 mH, R
c
J
= 25 °C, unless otherwise noted
DD
≤ V
DS
, T
e
J
≤ 150 °C.
SYMBOL
SYMBOL
ΔV
R
V
G
t
t
I
I
C
R
V
C
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
L
DS
L
= 25 Ω, I
t
DS
oss
t
thJA
thJC
iss
rss
gd
fs
gs
r
f
D
S
g
C
/T
= 25 °C, unless otherwise noted
J
AS
V
V
Between lead,
6 mm (0.25") from
package and center of
die contact
= - 1.8 A (see fig. 12).
T
T
GS
GS
C
A
V
for 10 s
R
DS
= 25 °C
= 25 °C
G
= - 10 V
= - 10 V
Reference to 25 °C, I
= 24 Ω, R
= - 48 V, V
V
V
V
V
V
DD
f = 1.0 MHz, see fig. 5
DS
TYP.
TEST CONDITIONS
DS
DS
GS
-
-
= - 30 V, I
= - 25 V, I
= - 60 V, V
= V
= 0 V, I
V
V
V
GS
I
DS
D
D
GS
GS
GS
= 4.0 Ω, see fig. 10
= - 6.7 A, V
= ± 20 V
, I
= 25 V,
= 0 V,
see fig. 6 and 13
= 0 V, T
D
D
D
= 250 µA
D
= 250 µA
I
GS
D
= - 6.7 A,
SYMBOL
= 1.1 A
T
= 1.1 A
dV/dt
D
J
= 0 V
P
, T
= 1 mA
J
D
DS
= 125 °C
G
stg
b
= - 48 V,
b
MAX.
D
S
b
b
60
40
- 55 to + 150
MIN.
- 2.0
- 60
1.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
LIMIT
300
- 4.5
3.1
2.0
d
Document Number: 91195
S-81412-Rev. A, 07-Jul-08
- 0.059
TYP.
270
170
9.6
4.0
6.0
31
11
63
31
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
- 100
- 500
- 4.0
0.50
3.8
5.1
12
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
V/ns
°C
W
UNIT
V/°C
nA
µA
nC
nH
pF
ns
V
V
Ω
S