IRLL014 Vishay, IRLL014 Datasheet
IRLL014
Specifications of IRLL014
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IRLL014 Summary of contents
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... IRLL014PbF SiHLL014-E3 IRLL014 SiHLL014 = 25 °C, unless otherwise noted ° 100 ° ° °C A for Ω 2.7 A (see fig. 12 ≤ 150 °C. J IRLL014, SiHLL014 Vishay Siliconix Specified and device design, low on-resistance SOT-223 SiHLL014TR-GE3 a IRLL014TRPbF a SiHLL014T-E3 a IRLL014TR a SiHLL014T SYMBOL LIMIT ± 2 ...
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... IRLL014, SiHLL014 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage ...
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... V , Drain-to-Source Voltage (V) DS Fig Typical Output Characteristics, T Document Number: 91319 S10-1257-Rev. C, 31-May-10 2. ° ° µs Pulse Width T = 150 ° 150 °C C IRLL014, SiHLL014 Vishay Siliconix 1 10 150 ° ° µs Pulse Width 2.5 3 3.5 4 4.5 V Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 ...
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... IRLL014, SiHLL014 Vishay Siliconix 700 MHz iss gs 600 rss oss ds 500 400 C 300 200 100 Drain-to-Source Voltage ( Fig Typical Capacitance vs. Drain-to-Source Voltage Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 10 Fig Typical Source-Drain Diode Forward Voltage ...
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... Single Pulse -1 10 (Thermal Response Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91319 S10-1257-Rev. C, 31-May-10 125 150 - 0 Rectangular Pulse Duration (s) 1 IRLL014, SiHLL014 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRLL014, SiHLL014 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 250 Top 200 Bottom 150 100 100 50 Starting T , Junction Temperature (°C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current ...
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... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRLL014, SiHLL014 Vishay Siliconix + + www.vishay.com 7 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...