IRFD9020 Vishay, IRFD9020 Datasheet - Page 5

• Manufacturer Part Number: IRFD9020
• Description: MOSFET P-CH 60V 1.6A 4-DIP
• Manufacturer: Vishay

Specifications of IRFD9020

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 960mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Vgs(th) (max) @ Id: 4V @ 1µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 570pF @ 25V
• Power - Max: 1.3W
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFD9020

Document Number: 90170
S-81412-Rev. A, 07-Jul-08
Fig. 9 - Maximum Drain Current vs. Case Temperature
Vary t
required I
Fig. 12a - Unclamped Inductive Test Circuit
p
to obtain
AS
R
- 10 V
G
V
DS
t
p
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
AS
D.U.T.
0.01 Ω
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+
-
V
DD
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
10 %
90 %
DS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
GS
DS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
- 10 V
V
IRFD9020, SiHFD9020
GS
t
d(on)
V
DS
t
r
t
p
D.U.T.
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Vishay Siliconix
D
t
d(off)
V
DS
t
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www.vishay.com
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V
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