IRL630SPBF Vishay, IRL630SPBF Datasheet - Page 6

• Manufacturer Part Number: IRL630SPBF
• Description: MOSFET N-CH 200V 9A D2PAK
• Manufacturer: Vishay

Specifications of IRL630SPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 5.4A, 5V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.4 Ohm @ 5 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 9 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 9A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 400mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: 2V
• Fall Time: 33 ns
• Rise Time: 57 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRL630SPBF

IRL630S, SiHL630S
Vishay Siliconix
www.vishay.com
6
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
Fig. 13a - Basic Gate Charge Waveform
5 V
AS
V
G
R
5 V
g
Q
GS
V
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T.
0.01 Ω
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
600
500
400
300
200
100
0
25
V
DD
Starting T , Juntion Temperature (°C)
= 50V
+
-
50
V
DD
J
75
100
TOP
BOTTOM 4.0A
Fig. 12b - Unclamped Inductive Waveforms
125
V
I
AS
12 V
DS
Fig. 13b - Gate Charge Test Circuit
V
GS
Same type as D.U.T.
5.7A
9.0A
Current regulator
I
D
0.2 µF
150
A
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S10-2476-Rev. B, 01-Nov-10
Document Number: 90390
D.U.T.
V
I
D
DS
+
-
V
V
DD
DS