SI7160DP-T1-GE3 Vishay, SI7160DP-T1-GE3 Datasheet - Page 5

MOSFET N-CH 30V 20A PPAK 8SOIC

SI7160DP-T1-GE3

Manufacturer Part Number
SI7160DP-T1-GE3
Description
MOSFET N-CH 30V 20A PPAK 8SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI7160DP-T1-GE3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.7 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
66nC @ 10V
Input Capacitance (ciss) @ Vds
2970pF @ 15V
Power - Max
27.7W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Transistor Polarity
N Channel + Schottky Diode
Continuous Drain Current Id
20A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
10mohm
Rds(on) Test Voltage Vgs
16V
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0087 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
17.8 A
Power Dissipation
5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7160DP-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7160DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74954
S09-0273-Rev. B, 16-Feb-09
35
28
21
14
7
0
0
25
D
Power, Junction-to-Case
T
is based on T
C
50
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
50
40
30
20
10
0
0
125
Package Limited
25
150
T
C
Current Derating*
50
- Case Temperature (°C)
75
100
2.5
2.0
1.5
1.0
0.5
0.0
0
125
25
Power, Junction-to-Ambient
150
T
A
50
- Ambient Temperature (°C)
75
Vishay Siliconix
Si7160DP
100
www.vishay.com
125
150
5

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