SI7858ADP-T1-E3 Vishay, SI7858ADP-T1-E3 Datasheet

MOSFET N-CH 12V 20A PPAK 8SOIC

SI7858ADP-T1-E3

Manufacturer Part Number
SI7858ADP-T1-E3
Description
MOSFET N-CH 12V 20A PPAK 8SOIC
Manufacturer
Vishay
Series
TrenchFET®r

Specifications of SI7858ADP-T1-E3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.6 mOhm @ 29A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
80nC @ 4.5V
Input Capacitance (ciss) @ Vds
5700pF @ 6V
Power - Max
1.9W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Transistor Polarity
N Channel
Continuous Drain Current Id
29A
Drain Source Voltage Vds
12V
On Resistance Rds(on)
2.6mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
600mV
Power Dissipation Pd
5.4W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI7858ADP-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7858ADP-T1-E3
Manufacturer:
VISHAY
Quantity:
7 810
Part Number:
SI7858ADP-T1-E3
Manufacturer:
VISHAY
Quantity:
180
Company:
Part Number:
SI7858ADP-T1-E3
Quantity:
70 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73164
S-80440-Rev. C, 03-Mar-08
Ordering Information: Si7858ADP-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
DS
12
8
(V)
6.15 mm
D
7
D
6
0.0026 at V
0.0037 at V
D
PowerP AK SO-8
Bottom V iew
5
Si7858ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
D
DS(on)
GS
GS
1
J
a
(Ω)
S
= 150 °C)
= 4.5 V
= 2.5 V
a
2
S
N-Channel 12-V (D-S) MOSFET
3
S
a
5.15 mm
4
I
G
D
29
23
(A)
a
b,c
A
Q
= 25 °C, unless otherwise noted
g
Steady State
Steady State
(Typ.)
T
T
T
T
54
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free available
• New Low Thermal Resistance PowerPAK
• 100 % R
• Low Output Voltage, High Current Synchronous
Symbol
Symbol
T
R
R
TrenchFET
Package with Low 1.07 mm Profile
Rectifiers
J
V
V
I
P
, T
DM
I
I
thJA
thJC
DS
GS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
10 s
4.5
5.4
3.4
1.0
29
23
18
50
G
N-Channel MOSFET
- 55 to 150
260
± 8
12
60
D
S
Steady State
Maximum
1.6
1.9
1.2
1.5
20
16
23
65
Vishay Siliconix
Si7858ADP
www.vishay.com
®
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SI7858ADP-T1-E3 Summary of contents

Page 1

... Bottom V iew Ordering Information: Si7858ADP-T1-E3 (Lead (Pb)-free) Si7858ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7858ADP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge ...

Page 3

... 0.00 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 73164 S-80440-Rev. C, 03-Mar °C J 0.8 1.0 1.2 Si7858ADP Vishay Siliconix 8000 7000 C iss 6000 5000 4000 C oss 3000 C rss 2000 1000 Drain-to-Source Voltage (V) DS Capacitance 1 4 1.4 1 ...

Page 4

... Si7858ADP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0.2 0.0 - 0.2 - 0.4 - 0.6 - 0 emperature ( °C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 250 µ 100 125 150 100 Limited DS(on 0 ° ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73164. Document Number: 73164 S-80440-Rev. C, 03-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7858ADP Vishay Siliconix www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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