IRLD110PBF Vishay, IRLD110PBF Datasheet - Page 2
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IRLD110PBF
Manufacturer Part Number
IRLD110PBF
Description
MOSFET N-CH 100V 1A 4-DIP
Manufacturer
Vishay
Type
Power MOSFETr
Specifications of IRLD110PBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
540 mOhm @ 600mA, 5V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
6.1nC @ 5V
Input Capacitance (ciss) @ Vds
250pF @ 25V
Power - Max
1.3W
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Resistance Drain-source Rds (on)
0.54 Ohm @ 5 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
1 A
Power Dissipation
1300 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Continuous Drain Current Id
1A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
540mohm
Rds(on) Test Voltage Vgs
5V
Threshold Voltage Vgs Typ
2V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.54Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±10V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
4
Package Type
HexDIP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRLD110PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRLD110PBF
Manufacturer:
IR
Quantity:
15 000
Company:
Part Number:
IRLD110PBF
Manufacturer:
Cypress
Quantity:
120
IRLD110, SiHLD110
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted)
SYMBOL
SYMBOL
V
R
V
t
t
I
I
C
V
C
V
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
L
t
DS
L
SM
I
t
t
on
DS
oss
t
SD
thJA
iss
rss
S
rr
gd
fs
gs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
V
T
GS
GS
GS
J
V
R
= 25 °C, I
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
DS
g
= 5.0 V
= 4.0 V
= 5.0 V
J
Reference to 25 °C, I
= 12 , R
= 25 °C, I
= 80 V, V
V
V
V
V
V
f = 1.0 MHz, see fig. 5
TYP.
DS
TEST CONDITIONS
DS
DS
GS
DD
-
= 50 V, I
= 100 V, V
F
= V
= 0 V, I
= 50 V, I
V
V
= 5.6 A, dI/dt = 100 A/µs
V
GS
D
DS
S
GS
GS
GS
I
= 8.4 , see fig. 10
= 1.0 A, V
D
= ± 10 V
, I
= 25 V,
= 0 V, T
= 0 V,
= 5.6 A, V
see fig. 6 and 13
D
D
D
D
= 250 µA
I
I
= 250 µA
= 0.60 A
D
D
GS
= 5.6 A,
= 0.60 A
= 0.50 A
D
= 0 V
J
GS
= 1 mA
= 150 °C
DS
G
G
= 0 V
b
= 80 V,
b
b
MAX.
D
S
b
b
b
120
D
S
b
MIN.
100
1.0
1.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-2465-Rev. C, 08-Nov-10
Document Number: 91309
TYP.
0.12
0.50
250
110
9.3
4.7
4.0
6.0
80
15
16
17
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
0.54
0.76
0.65
S
250
130
2.0
6.1
2.6
3.3
1.0
8.0
2.5
25
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
V/°C
nA
µA
nC
nH
µC
pF
ns
ns
V
V
S
A
V