IRFD9024PBF Vishay, IRFD9024PBF Datasheet - Page 2

MOSFET P-CH 60V 1.6A 4-DIP

IRFD9024PBF

Manufacturer Part Number
IRFD9024PBF
Description
MOSFET P-CH 60V 1.6A 4-DIP
Manufacturer
Vishay
Datasheets

Specifications of IRFD9024PBF

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
280 mOhm @ 960mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
1.6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 10V
Input Capacitance (ciss) @ Vds
570pF @ 25V
Power - Max
1.3W
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Resistance Drain-source Rds (on)
0.28 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.6 A
Power Dissipation
1300 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Continuous Drain Current Id
-1.6A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
280mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFD9024PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFD9024PBF
Manufacturer:
Vishay/Siliconix
Quantity:
46 916
Part Number:
IRFD9024PBF
Manufacturer:
SIL
Quantity:
6 687
Company:
Part Number:
IRFD9024PBF
Quantity:
4 100
Company:
Part Number:
IRFD9024PBF
Quantity:
70 000
IRFD9024, SiHFD9024
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width  300 μs; duty cycle  2 %
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
= 25 °C, unless otherwise noted)
a
SYMBOL
SYMBOL
V
R
V
t
t
C
I
I
C
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
L
t
L
SM
t
I
t
t
on
DS
oss
SD
thJA
iss
rss
S
gs
gd
rr
fs
r
f
D
S
g
rr
/T
J
V
V
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
J
GS
GS
V
= 25 °C, I
R
T
DS
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
Reference to 25 °C, I
= - 10 V
= - 10 V
g
= 25 °C, I
= 18 , R
= - 48 V, V
V
V
DS
V
V
V
f = 1.0 MHz, see fig. 5
DS
DD
TYP.
GS
TEST CONDITIONS
DS
= - 25 V, I
-
F
= V
= - 30 V, I
= 0 V, I
= - 60 V, V
V
= - 11 A, dI/dt = 100 A/μs
V
GS
S
V
DS
D
GS
I
GS
D
= - 1.6 A, V
GS
= 2.5 , see fig. 10
, I
= ± 20 V
= - 25 V
= - 11 A, V
see fig. 6 and 13
D
= 0 V
D
= 0 V, T
D
= - 250 μA
= - 250 μA
I
D
D
= - 0.96 A
GS
= - 0.96 A
= - 11 A
D
= 0 V
= - 1 mA
J
GS
= 150 °C
DS
G
G
= 0 V
= - 48 V
b
b
MAX.
D
S
b
b
b
120
D
S
b
MIN.
- 2.0
- 60
1.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-2463-Rev. C, 08-Nov-10
Document Number: 91137
- 0.056
TYP.
0.32
570
360
100
4.0
6.0
65
13
68
15
29
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
- 100
- 500
- 4.0
0.28
- 1.6
- 6.3
0.64
- 13
200
5.4
S
19
11
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nC
nH
μC
nA
μA
pF
ns
ns
S
A
V
V
V

Related parts for IRFD9024PBF