IRFU9010PBF Vishay, IRFU9010PBF Datasheet - Page 3
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IRFU9010PBF
Manufacturer Part Number
IRFU9010PBF
Description
MOSFET P-CH 50V 5.3A I-PAK
Manufacturer
Vishay
Series
HEXFET®r
Specifications of IRFU9010PBF
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 2.8A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
5.3A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
9.1nC @ 10V
Input Capacitance (ciss) @ Vds
240pF @ 25V
Power - Max
25W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Continuous Drain Current
5.3 A
Drain-source Breakdown Voltage
50 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Continuous Drain Current Id
-5.3A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
500mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFU9010PBF
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics
Fig. 4 - Maximum Safe Operating Area
Fig. 5 - Typical Transconductance vs. Drain Current
Fig. 2 - Typical Transfer Characteristics
Fig. 6 - Typical Source-Drain Diode Forward Voltage
Fig. 3 - Typical Saturation Characteristics
Document Number: 91378
www.vishay.com
S10-1135-Rev. C, 10-May-10
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