IRFD110PBF Vishay, IRFD110PBF Datasheet - Page 4

• Manufacturer Part Number: IRFD110PBF
• Description: MOSFET N-CH 100V 1A 4-DIP
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFD110PBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 540 mOhm @ 600mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 180pF @ 25V
• Power - Max: 1.3W
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 0.54 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 1300 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 1A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 540mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.54Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 4
• Package Type: HexDIP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFD110PBF

IRFD110, SiHFD110
Vishay Siliconix
www.vishay.com
4
91127_05
91127_06
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
400
320
240
160
80
20
16
12
0
8
4
0
10
0
0
I
D
= 5.6 A
V
DS ,
2
Q
V
G
Drain-to-Source Voltage (V)
DS
, Total Gate Charge (nC)
= 20 V
V
4
DS
V
C
C
C
GS
iss
rss
oss
= 50 V
V
= C
= 0 V, f = 1 MHz
= C
= C
DS
C
C
C
10
gs
gd
iss
oss
rss
ds
= 80 V
6
1
+ C
+ C
gd
gd
For test circuit
see figure 13
, C
ds
8
Shorted
10
91127_07
91127_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
0.1
10
Fig. 8 - Maximum Safe Operating Area
0
-1
2
5
2
5
2
1
5
2
0.5
0.1
2
0.6
V
V
SD
DS
5
175
Operation in this area limited
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
1
0.7
°
25
C
2
°
C
T
T
Single Pulse
0.8
by R
A
J
5
= 175 °C
= 25 °C
10
DS(on)
S10-2466-Rev. C, 25-Oct-10
0.9
Document Number: 91127
2
5
1.0
10
100
10
10
1
2
V
ms
2
µs
ms
GS
1.1
µs
= 0 V
5
1.2
10
3