SI4378DY-T1-GE3 Vishay, SI4378DY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI4378DY-T1-GE3
• Description: MOSFET N-CH 20V 19A 8-SOIC
• Manufacturer: Vishay

Specifications of SI4378DY-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.7 mOhm @ 25A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 55nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 8500pF @ 10V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 25A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 4.2mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 1.8V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4378DY-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72918
S09-0226-Rev. C, 09-Feb-09
0.006
0.005
0.004
0.003
0.002
0.001
0.000
6
5
4
3
2
1
0
50
10
1
0
0.00
0
V
I
D
10
DS
Source-Drain Diode Forward Voltage
= 25 A
On-Resistance vs. Drain Current
0.2
10
= 10 V
T
V
J
Q
SD
20
= 150 °C
g
- Source-to-Drain Voltage (V)
- Total Gate Charge (nC)
0.4
20
I
D
Gate Charge
V
-
GS
30
Drain Current (A)
= 4.5 V
0.6
30
40
V
GS
= 2.5 V
0.8
40
50
T
J
= 25 °C
60
1.0
50
70
1.2
60
10000
0.015
0.012
0.009
0.006
0.003
0.000
8000
6000
4000
2000
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
V
I
D
GS
= 25 A
V
2
4
= 4.5 V
GS
V
T
DS
J
0
- Junction Temperature (°C)
-
-
Gate-to-Source Voltage (V)
Drain-to-Source Voltage (V)
C
25
Capacitance
oss
8
4
I
D
C
50
= 25 A
Vishay Siliconix
iss
12
6
75
Si4378DY
C
www.vishay.com
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100
16
8
125
150
10
20
3