SIB417EDK-T1-GE3 Vishay, SIB417EDK-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SIB417EDK-T1-GE3
• Description: MOSFET P-CH 8V 9A SC75-6
• Manufacturer: Vishay

Specifications of SIB417EDK-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 58 mOhm @ 5.8A, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 565pF @ 4V
• Power - Max: 13W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-75-6L
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.058 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 5 V
• Continuous Drain Current: 5.8 A
• Power Dissipation: 2400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -9A
• Drain Source Voltage Vds: -8V
• On Resistance Rds(on): 222mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIB417EDK-T1-GE3TR

SiB417EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
0.01
0.1
0.1
1
www.vishay.com/ppg?68699.
1
10
10
0.05
0.02
-4
-4
0.2
0.1
0.1
Duty Cycle = 0.5
Duty Cycle = 0.5
0.2
Single Pulse
Single Pulse
0.02
0.05
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
10
-3
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
1
10
-2
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
S09-1500-Rev. B, 10-Aug-09
= P
t
2
Document Number: 68699
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 80 °C/W
1000
10
-1