SIA415DJ-T1-GE3 Vishay, SIA415DJ-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SIA415DJ-T1-GE3
• Description: MOSFET P-CH 20V 12A SC70-6
• Manufacturer: Vishay

Specifications of SIA415DJ-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 5.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 1250pF @ 10V
• Power - Max: 19W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-70-6
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Dual Source
• Resistance Drain-source Rds (on): 0.035 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 20 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 8.4 A
• Power Dissipation: 3500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -12A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 51mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: -1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIA415DJ-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69512
S-80435-Rev. B, 03-Mar-08
0.08
0.06
0.04
0.02
10
30
25
20
15
10
0
8
6
4
2
0
5
0
On-Resistance vs. Drain Current and Gate Voltage
0
0
0
I
D
V
= 8.4 A
GS
0.5
5
= 2.5 V
V
DS
8
Q
Output Characteristics
g
- Drain-to-Source Voltage (V)
1.0
10
- Total Gate Charge (nC)
I
D
V
- Drain Current (A)
DS
Gate Charge
= 10 V
1.5
15
16
V
GS
= 5 thru 3 V
V
2.0
DS
20
= 16 V
24
V
V
V
V
GS
GS
GS
GS
2.5
25
= 2.5 V
= 4.5 V
= 2 V
= 1.5 V
New Product
3.0
30
32
2100
1800
1500
1200
900
600
300
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
5
4
3
2
1
0
0
- 50
0
0
I
D
= 5.6 A
On-Resistance vs. Junction Temperature
C
- 25
rss
4
V
V
0.5
DS
GS
Transfer Characteristics
T
0
J
C
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
oss
V
GS
25
Capacitance
8
= 4.5 V, 2.5 V
T
1.0
C
50
C
= 125 °C
iss
Vishay Siliconix
T
C
T
= 25 °C
12
C
75
= -- 55 °C
SiA415DJ
1.5
100
www.vishay.com
16
125
2.0
150
20
3