ZXMN3A04KTC Diodes Zetex, ZXMN3A04KTC Datasheet - Page 4

MOSFET N-CH 30V 18.4A DPAK

ZXMN3A04KTC

Manufacturer Part Number
ZXMN3A04KTC
Description
MOSFET N-CH 30V 18.4A DPAK
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMN3A04KTC

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
1V @ 250mA
Gate Charge (qg) @ Vgs
36.8nC @ 10V
Input Capacitance (ciss) @ Vds
1890pF @ 15V
Power - Max
2.15W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMN3A04KTCTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN3A04KTC
Manufacturer:
ZETEX
Quantity:
20 000
ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Pulse width
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN3A04K
PARAMETER
STATIC
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state resistance
Forward transconductance
DYNAMIC
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Total gate charge
Gate-source charge
Gate drain charge
SOURCE-DRAIN DIODE
Diode forward voltage (1)
Reverse recovery time (3)
Reverse recovery charge (3)
S E M I C O N D U C T O R S
(3)
(2) (3)
(1) (3)
(1)
300 s; duty cycle
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
amb
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
g
gs
gd
rr
= 25°C unless otherwise stated)
4
2%.
MIN.
1.0
30
1890
TYP.
22.1
38.1
20.2
19.9
36.8
0.85
18.4
349
218
5.2
6.1
5.8
7.1
11
MAX. UNIT CONDITIONS
0.02
0.03
0.95
100
0.5
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
ISSUE 1 - FEBRUARY 2004
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt=100A/ s
D
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G
DS
DS
GS
= 250 A, V
= 250mA, V
= 6.5A
= 6.5A
=25°C, I
=25°C, I
≅6.0 , V
= 30V, V
= 15V, I
= 15V, V
= 15V, V
= 15V, V
=±20V, V
= 10V, I
= 4.5V, I
= 15V, I
=0V
S
S
= 6.8A,
= 2.3A,
GS
D
D
D
D
GS
GS
GS
GS
= 12A
= 12.6A
= 1A
DS
GS
DS
= 9.8A
= 10V
=0V
=0V
= 5V
= 10V
=0V
=0V
=V
GS

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