ZXMN2A02N8TA Diodes Zetex, ZXMN2A02N8TA Datasheet

MOSFET N-CH 20V 8.3A 8-SOIC

ZXMN2A02N8TA

Manufacturer Part Number
ZXMN2A02N8TA
Description
MOSFET N-CH 20V 8.3A 8-SOIC
Manufacturer
Diodes Zetex
Datasheet
1.ZXMN2A02N8TA.pdf (8 pages)

Specifications of ZXMN2A02N8TA

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 11A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
8.3A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
18.9nC @ 4.5V
Input Capacitance (ciss) @ Vds
1900pF @ 10V
Power - Max
1.56W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMN2A02N8TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
ZXMN2A02N8TA
Manufacturer:
ZETEX
Quantity:
20 000
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•
•
•
•
•
APPLICATIONS
•
•
ORDERING INFORMATION
DEVICE MARKING
•
ISSUE 6 - FEBRUARY 2007
DEVICE
ZXMN2A02N8TA
ZXMN2A02N8TC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
Disconnect switches
Motor control
ZXMN
2A02
= 20V; R
DS(ON)
REEL
SIZE
13”
7”
= 0.02
WIDTH
12mm
12mm
TAPE
I
D
QUANTITY
2500 units
PER REEL
= 10.2A
500 units
1
ZXMN2A02N8
S E M I C O N D U C T O R S
Top View
SO8

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ZXMN2A02N8TA Summary of contents

Page 1

... Low gate drive • Low profile SOIC package APPLICATIONS • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL TAPE SIZE WIDTH ZXMN2A02N8TA 7” 12mm ZXMN2A02N8TC 13” 12mm DEVICE MARKING • ZXMN 2A02 ISSUE 6 - FEBRUARY 2007 I = 10.2A D QUANTITY PER REEL ...

Page 2

ZXMN2A02N8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current V =10V =10V =10V (c) Pulsed Drain Current Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (a) ...

Page 3

ISSUE 6 - FEBRUARY 2007 CHARACTERISTICS 3 ZXMN2A02N8 ...

Page 4

ZXMN2A02N8 ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State (1) Resistance (1)(3) Forward Transconductance (3) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) (3) SWITCHING ...

Page 5

ISSUE 6 - FEBRUARY 2007 CHARACTERISTICS 5 ZXMN2A02N8 ...

Page 6

ZXMN2A02N8 CHARACTERISTICS 6 ISSUE 6 - FEBRUARY 2007 ...

Page 7

Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

Page 8

ZXMN2A02N8 PACKAGE OUTLINE D Pin CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETERS © Zetex Semiconductors plc 2007 Europe Americas Zetex GmbH Zetex Inc Kustermann-Park 700 Veterans Memorial Hwy Balanstraße 59 Hauppauge, NY 11788 D-81541 München USA ...

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