SI7421DN-T1-E3 Vishay, SI7421DN-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI7421DN-T1-E3
• Description: MOSFET P-CH 30V 6.4A 1212-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7421DN-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 mOhm @ 9.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -9.8A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 43mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7421DN-T1-E3TR

Si7421DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
- 0.3
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.01
0.1
- 50
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
- 25
Single Pulse
0
Threshold Voltage
I
T
D
J
= 250
10
25
- Temperature (°C)
-3
µA
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
10
100
100
0.1
10
-2
1
0.1
Limited by R
* V
125
Limited
I
D(on)
GS
Single Pulse
T
A
> minimum V
150
Square Wave Pulse Duration (s)
V
= 25 °C
DS
DS(on)*
Safe Operating Area
- Drain-to-Source Voltage (V)
10
-1
1
GS
BVDSS Limited
at which R
DS(on)
10
50
40
30
20
10
1
I
0
DM
0.01
Limited
is specified
Single Pulse Power, Junction-to-Ambient
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 10
DC
P(t) = 1
0.1
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
1
A
t
Time (s)
1
= P
t
2
S-83051-Rev. D, 29-Dec-08
DM
Document Number: 72416
Z
thJA
10
thJA
100
t
t
1
2
(t)
= 65 °C/W
100
600
600