SI9407BDY-T1-GE3 Vishay, SI9407BDY-T1-GE3 Datasheet

MOSFET P-CH 60V 4.7A 8-SOIC

SI9407BDY-T1-GE3

Manufacturer Part Number
SI9407BDY-T1-GE3
Description
MOSFET P-CH 60V 4.7A 8-SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI9407BDY-T1-GE3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
120 mOhm @ 3.2A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
4.7A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Input Capacitance (ciss) @ Vds
600pF @ 30V
Power - Max
5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.12 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.2 A
Power Dissipation
2400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-4.7A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
150mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI9407BDY-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI9407BDY-T1-GE3
Manufacturer:
VISHAY
Quantity:
25 000
Part Number:
SI9407BDY-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
43 879
Part Number:
SI9407BDY-T1-GE3
Manufacturer:
VISHAY
Quantity:
8 000
Part Number:
SI9407BDY-T1-GE3
Manufacturer:
VISHAY
Quantity:
310
Part Number:
SI9407BDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI9407BDY-T1-GE3
0
Company:
Part Number:
SI9407BDY-T1-GE3
Quantity:
70 000
Ordering Information: Si9407BDY-T1-E3 (Lead (Pb)-free)
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Document Number: 69902
S09-0704-Rev. B, 27-Apr-09
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Width)
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
- 60
(V)
G
S
S
S
C
1
2
3
4
= 25 °C.
0.150 at V
0.120 at V
Si9407BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
Top View
R
SO-8
DS(on)
GS
GS
(Ω)
= - 4.5 V
J
= - 10 V
= 150 °C)
b, d
8
7
6
5
P-Channel 60-V (D-S) MOSFET
D
D
D
D
I
D
- 4.7
- 4.2
(A)
a
A
= 25 °C, unless otherwise noted
Q
Steady State
g
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
8 nC
(Typ.)
C
C
A
A
C
A
C
C
A
A
New Product
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
• Primary Side Switch
Symbol
Symbol
T
Definition
R
R
J
V
V
E
I
I
P
, T
I
DM
I
AS
thJA
thJF
DS
GS
AS
D
S
D
stg
®
Power MOSFET
Typical
42
19
G
P-Channel MOSFET
- 55 to 150
- 3.2
- 2.6
2.4
1.5
- 2
Limit
± 20
- 4.7
- 3.8
- 4.2
- 60
- 20
- 15
3.2
11
5
b, c
b, c
b, c
b, c
b, c
S
D
Maximum
53
25
Vishay Siliconix
Si9407BDY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

Related parts for SI9407BDY-T1-GE3

SI9407BDY-T1-GE3 Summary of contents

Page 1

... Top View Ordering Information: Si9407BDY-T1-E3 (Lead (Pb)-free) Si9407BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Width) Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation ...

Page 2

... Si9407BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Gate Charge Document Number: 69902 S09-0704-Rev. B, 27-Apr-09 New Product 1000 800 600 400 200 15 20 1.8 1.6 1.4 1 1.0 0.8 0 Si9407BDY Vishay Siliconix ° 150 ° ° 0.0 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss ...

Page 4

... Si9407BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.30 0.25 0.20 0. °C J 0.10 0.05 0.8 1.0 1.2 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69902 S09-0704-Rev. B, 27-Apr-09 New Product 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si9407BDY Vishay Siliconix 100 125 T - Case Temperature (°C) C Power Derating www.vishay.com 150 5 ...

Page 6

... Si9407BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords