ZXMP4A16GTA Diodes Zetex, ZXMP4A16GTA Datasheet - Page 4

• Manufacturer Part Number: ZXMP4A16GTA
• Description: MOSFET P-CH 40V 6.4A SOT223
• Manufacturer: Diodes Zetex
• Type: Power MOSFETr

Specifications of ZXMP4A16GTA

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 3.8A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 4.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 26.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 1007pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.06Ohm
• Drain-source On-volt: 40V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 6.4A
• Power Dissipation: 3.9W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMP4A16GTR

ELECTRICAL CHARACTERISTICS
NOTES
(1) Measured under pulsed conditions. Width
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance
Forward Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ZXMP4A16G
S E M I C O N D U C T O R S
(3)
(1)
(2)(3)
(1)
(3)
(3)
(1)(3)
(at T
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
300µs. Duty cycle
DSS
GSS
d(on)
r
d(off)
f
rr
amb
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
g
gs
gd
rr
= 25°C unless otherwise stated).
4
MIN.
-40
-1.0
2%.
TYP.
8.85
1007
130
85
2.33
8.84
29.18
12.54
13.6
26.1
2.8
4.8
-0.85
27.2
25.4
MAX. UNIT CONDITIONS
-1
100
0.060
0.100
-1.2
V
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
V
ns
nC
A
I
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt= 100A/ s
D
V
D
D
D
J
J
DS
GS
GS
DS
DS
DD
G
DS
DS
GS
=-250 A, V
=-250 A, V
=-3.8A
=-3.8A
GS
=25 C, I
=25 C, I
(
=-40V, V
=-15V,I
=-20V, V
=-20V,V
=-20V,V
=-10V, I
=-4.5V, I
=0V
=-20V, I
= 20V, V
6 .0
ISSUE 4 - JULY 2003
S
F
V
D
=-3A,
=-3.4A,
D
GS
GS
GS
=-3.8A
D
GS
D
GS
=-3.8A
GS
DS
=-1A
=-2.9A
DS
=-5V,
=-10V,
=-10V
=0V
=0V,
=0V
= V
=0V
GS