SI4462DY-T1-E3 Vishay, SI4462DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4462DY-T1-E3
• Description: MOSFET N-CH 200V 1.15A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4462DY-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 480 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 1.15A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 9nC @ 10V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.48 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.15 A
• Power Dissipation: 1300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 1.5A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 510mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4462DY-T1-E3TR

Si4462DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.4
- 0.8
- 1.2
0.8
0.4
0.0
0.01
- 50
0.1
2
1
10
- 25
- 4
0.05
0.2
0.1
Duty Cycle = 0.5
0.02
0
T
Threshold Voltage
J
- Temperature (°C)
25
10
- 3
Single Pulse
50
I
D
= 250 µA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.001
0.01
0.1
100
10
1
10
0.1
Limited by R
- 2
Limited
I
* V
D(on)
125
GS
Single Pulse
T
A
> minimum V
Square Wave Pulse Duration (s)
150
= 25 °C
(DS)on
V
1
DS
Safe Operating Area
- Drain-to-Source Voltage (V)
10
*
- 1
BV
GS
DSS
at which R
Limited
10
I
DM
DS(on)
Limited
50
40
30
20
10
1
0.001
0
100
is specified
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
0.01
1000
10
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
0.1
- T
Time (s)
t
1
A
S09-0705-Rev. C, 27-Apr-09
= P
t
2
Document Number: 72093
DM
1
Z
thJA
thJA
100
t
t
1
2
(t)
= 70 °C/W
10
100
600
600