ZXMP3A16N8TA Diodes Zetex, ZXMP3A16N8TA Datasheet

MOSFET P-CH 30V 5.6A 8-SOIC

ZXMP3A16N8TA

Manufacturer Part Number
ZXMP3A16N8TA
Description
MOSFET P-CH 30V 5.6A 8-SOIC
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMP3A16N8TA

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
40 mOhm @ 4.2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.6A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
29.6nC @ 10V
Input Capacitance (ciss) @ Vds
1022pF @ 15V
Power - Max
1.9W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMP3A16N8TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMP3A16N8TA
Manufacturer:
ZETEX
Quantity:
20 000
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ISSUE 2 - MAY 2007
DEVICE
ZXMP3A16N8TA
ZXMP3A16N8TC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
Disconnect switches
Motor control
ZXMP
3A16
= -30V; R
DS(ON)
REEL
SIZE
13”
7”
= 0.040
WIDTH
12mm
12mm
TAPE
QUANTITY
I
2500 units
PER REEL
500 units
D
= -6.7A
1
PINOUT
ZXMP3A16N8
Top View
SO8

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ZXMP3A16N8TA Summary of contents

Page 1

... Low gate drive • Low profile SOIC package APPLICATIONS • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL TAPE SIZE WIDTH ZXMP3A16N8TA 7” 12mm ZXMP3A16N8TC 13” 12mm DEVICE MARKING • ZXMP 3A16 ISSUE 2 - MAY 2007 I = -6.7A D QUANTITY PER REEL ...

Page 2

ZXMP3A16N8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current V =-10V =-10V =-10V Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) ...

Page 3

R DS(on) Limited 100ms 100m 10ms 1ms Single Pulse T =25°C 10m amb 1 -V Drain-Source Voltage (V) DS Safe Operating Area 70 T =25°C amb 60 50 D=0 D=0 D=0.1 0 ...

Page 4

ZXMP3A16N8 ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) R Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) ...

Page 5

T = 25° 0.1 0.01 0 Drain-Source Voltage (V) DS Output Characteristics 150° 25° Gate-Source Voltage (V) GS Typical Transfer Characteristics 1.5V 100 -V GS ...

Page 6

ZXMP3A16N8 ISSUE 2 - MAY 2007 6 ...

Page 7

Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

Page 8

ZXMP3A16N8 PACKAGE OUTLINE CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETERS PACKAGE DIMENSIONS Millimeters Inches DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.004 0.010 D 4.80 5.00 0.189 0.197 H 5.80 6.20 0.228 0.244 ...

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