ZVN4424GTA Diodes Zetex, ZVN4424GTA Datasheet - Page 3

• Manufacturer Part Number: ZVN4424GTA
• Description: MOSFET N-CH 240V 500MA SOT223
• Manufacturer: Diodes Zetex
• Type: Power MOSFETr

Specifications of ZVN4424GTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 240V
• Current - Continuous Drain (id) @ 25° C: 500mA
• Vgs(th) (max) @ Id: 1.8V @ 1mA
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 5.5Ohm
• Drain-source On-volt: 240V
• Gate-source Voltage (max): ±40V
• Continuous Drain Current: 500mA
• Power Dissipation: 2.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Compliant
• Other names: ZVN4424GTR

10
1.0
100
800
600
400
200
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.01
0
0
300 s Pulsed Test
Transconductance v drain current
On-resistance vs Drain Current
0.2
Saturation Characteristics
V
DS
I
D
2
- Drain Current (Amps)
- Drain Source Voltage (Volts)
0.4
0.1
I
D-
Drain Current (Amps)
V
300 s Pulsed Test
V
GS
4
DS
0.6
=2V
=10Vz
TYPICAL CHARACTERISTICS
0.8
300 s Pulsed Test
2.5V
6
1.0
3V
1.0
10V
8
1.2
V
GS
10
1.4
10
=10V
5V
4V
3V
2.5V
2V
3 - 417
Normalised R
Transconductance v gate-source voltage
800
600
400
200
0
2.4
2.0
1.6
1.2
0.8
0.4
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-50
0
0
V
-25
Transfer Characteristics
GS
V
DS(on)
2
1
- Gate Source Voltage (Volts)
GS
Junction Temperature (°C)
-Gate Source Voltage (Volts)
0
and V
4
2
25
300 s Pulsed Test
V
DS
ZVN4424G
=10V
50
GS(th)
300 s Pulsed Test
V
DS
6
3
=10V
75
V
I
V
vs Temperature
I
D
D=
GS=
GS=
=0.5A
1mA
100
10V
8
4
V
DS
125
10
5
150