SI4431CDY-T1-GE3 Vishay, SI4431CDY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI4431CDY-T1-GE3
• Description: MOSFET P-CH 30V 9A 8-SOIC
• Manufacturer: Vishay

Specifications of SI4431CDY-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 32 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1006pF @ 15V
• Power - Max: 4.2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.032 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -9A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 49mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -2.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4431CDY-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68748
S09-0322-Rev. B, 02-Mar-09
0.06
0.05
0.04
0.03
0.02
0.01
30
25
20
15
10
10
0
5
0
8
6
4
2
0
0
0
0
I
D
= 7 A
On-Resistance vs. Drain Current
4
5
1
V
DS
V
Output Characteristics
V
V
Q
GS
GS
GS
g
- Drain-to-Source Voltage (V)
I
10
- Total Gate Charge (nC)
D
8
= 10 V thru 4 V
= 10 V
= 4.5 V
Gate Charge
- Drain Current (A)
2
V
DS
12
15
= 15 V
3
V
DS
16
20
= 24 V
V
V
GS
GS
= 3 V
= 1 V, 2 V
4
20
25
New Product
24
30
5
1800
1500
1200
900
600
300
4.0
3.2
2.4
1.6
0.8
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
- 25
rss
0.5
6
V
V
DS
T
GS
Transfer Characteristics
0
C
J
oss
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
1.0
V
25
GS
Capacitance
12
= - 10 V, I
1.5
C
50
T
iss
Vishay Siliconix
C
V
= 125 °C
T
Si4431CDY
GS
18
C
D
T
75
= 25 °C
C
= - 5.6 A
= - 4.5 V, I
2.0
= - 55 °C
www.vishay.com
100
24
2.5
D
125
= - 7 A
150
3.0
30
3