SI5435BDC-T1-GE3 Vishay, SI5435BDC-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI5435BDC-T1-GE3
• Description: MOSFET P-CH 30V 4.3A 1206-8
• Manufacturer: Vishay

Specifications of SI5435BDC-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Minimum Operating Temperature: - 55 C
• Configuration: Single Hex Drain
• Resistance Drain-source Rds (on): 0.045 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.3 A
• Power Dissipation: 1300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -5.9A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 80mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI5435BDC-T1-GE3TR

Si5435BDC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
- 0.3
0.6
0.5
0.4
0.3
0.2
0.1
0.0
- 50
0.01
0.1
2
1
10
- 25
-4
Duty Cycle = 0.5
0.1
0.05
0.02
0.2
0
Threshold Voltage
T
J
25
- Temperature (°C)
10
-3
Single Pulse
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250
75
µA
0.01
100
0.1
100
10
1
10
0.1
-2
* V
125
Limited
GS
Limited by R
I
D(on)
Single Pulse
T
> minimum V
C
150
V
= 25 °C
DS
Square Wave Pulse Duration (s)
Safe Operating Area
- Drain-to-Source Voltage (V)
10
DS(on)*
1
-1
GS
at which R
BVDSS Limited
DS(on)
10
50
40
30
20
10
0
10
1
I
DM
is specified
-3
Limited
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
10
-2
100
Single Pulse Power
10
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
-1
DM
JM
Time (s)
- T
t
A
S09-0129-Rev. B, 02-Feb-09
1
= P
1
t
Document Number: 73137
2
DM
Z
thJA
thJA
100
t
t
10
1
2
(t)
= 80 °C/W
100
600
600