SI5404BDC-T1-E3 Vishay, SI5404BDC-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI5404BDC-T1-E3
• Description: MOSFET N-CH 20V 5.4A 1206-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5404BDC-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 5.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.4A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Minimum Operating Temperature: - 55 C
• Configuration: Single Hex Drain
• Resistance Drain-source Rds (on): 0.028 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 5.4 A
• Power Dissipation: 1300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 7.5A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 39mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI5404BDC-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73102
S-83054-Rev. B, 29-Dec-08
0.10
0.08
0.06
0.04
0.02
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
I
D
= 5.4 A
Source-Drain Diode Forward Voltage
1
0.2
On-Resistance vs. Drain Current
V
GS
4
V
SD
= 2.5 V
2
Q
g
- Source-to-Drain Voltage (V)
0.4
-
I
D
Total Gate Charge (nC)
Gate Charge
3
- Drain Current (A)
8
T
V
J
DS
= 150 °C
0.6
4
= 10 V
12
5
0.8
V
GS
6
T
J
16
= 4.5 V
= 25 °C
1.0
7
1.2
20
8
1200
1000
0.06
0.05
0.04
0.03
0.02
0.01
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
I
On-Resistance vs. Gate-to-Source Voltage
D
On-Resistance vs. Junction Temperature
C
= 5.4 A
- 25
rss
I
D
1
4
V
V
= 2.6 A
T
GS
DS
0
J
C
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
iss
25
Capacitance
2
8
C
50
oss
V
Vishay Siliconix
I
GS
D
= 5.4 A
Si5404BDC
= 4.5 V
12
3
75
www.vishay.com
100
16
4
125
150
20
5
3