ZXMP10A16KTC Diodes Zetex, ZXMP10A16KTC Datasheet - Page 4

• Manufacturer Part Number: ZXMP10A16KTC
• Description: MOSFET P-CH 100V DPAK
• Manufacturer: Diodes Zetex

Specifications of ZXMP10A16KTC

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 235 mOhm @ 2.1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 16.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 717pF @ 50V
• Power - Max: 2.15W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMP10A16KTR

Electrical characteristics (at T
(*) Measured under pulsed conditions. Pulse width
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 1 - October 2006
© Zetex Semiconductors plc 2006
NOTES:
Parameter
Static
Drain-source breakdown
voltage
Zero gate voltage drain current I
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state
resistance
Forward transconductance
Dynamic
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate drain charge
Source-drain diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(‡)
(*)
(†) (‡)
(*)
(‡)
(‡)
(*) (‡)
Symbol
V
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
rr
amb
= 25°C unless otherwise stated)
300 s; duty cycle
Min.
-100
-2.0
4
-0.85
Typ.
55.3
46.4
12.1
16.5
2.47
5.36
43.3
76.5
717
4.7
4.3
5.2
20
2%.
0.235
0.285
Max.
-0.95
-4.0
100
-1
Unit Conditions
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
W
V
V
S
V
A
ZXMP10A16K
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
I
T
V
T
di/dt=100A/ s
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G
DS
GS
= 250 A, V
= -250 A, V
= -2.1A
=25°C, I
=25°C, I
=6.0 , V
= -100V, V
=±20V, V
= -10V, I
= -6V, I
= -15V, I
= -50V, V
= -50V, I
= -50V, V
=0V
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S
S
D
= -3.35A,
= -2.4A,
GS
D
D
= -1.9A
D
GS
GS
DS
GS
= -2.1A
= -2.1A
= -1A
DS
= -10V
GS
=0V
=0V
= -10V
=0V
=V
=0V
GS