SI3433BDV-T1-E3 Vishay, SI3433BDV-T1-E3 Datasheet - Page 3
![MOSFET P-CH 20V 4.3A 6-TSOP](/photos/5/42/54267/pkg_5540_sml.jpg)
SI3433BDV-T1-E3
Manufacturer Part Number
SI3433BDV-T1-E3
Description
MOSFET P-CH 20V 4.3A 6-TSOP
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI3433BDV-T1-E3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
42 mOhm @ 5.6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
850mV @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
6-TSOP
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain
Resistance Drain-source Rds (on)
0.042 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
4.3 A
Power Dissipation
1100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-5.6A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
42mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-450mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI3433BDV-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3433BDV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 71160
S-00624—Rev. A, 03-Apr-00
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.15
0.12
0.09
0.06
0.03
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 5.6 A
0.2
On-Resistance vs. Drain Current
= 10 V
4
V
SD
Q
3
g
V
- Source-to-Drain Voltage (V)
I
0.4
GS
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
= 2.5 V
V
8
GS
T
0.6
= 1.8 V
6
J
= 150_C
12
0.8
V
T
GS
9
J
= 25_C
16
= 4.5 V
1.0
1.2
20
12
New Product
2500
2000
1500
1000
0.15
0.12
0.09
0.06
0.03
0.00
500
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
C
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
rss
V
I
D
- 25
GS
= 5.6 A
= 4.5 V
1
4
T
V
V
0
J
C
GS
DS
C
oss
- Junction Temperature (_C)
iss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
2
8
I
D
Vishay Siliconix
50
= 5.6 A
12
3
75
100
Si3433
16
www.vishay.com
4
125
150
20
5
2-3