ZXMN6A08E6TA Diodes Zetex, ZXMN6A08E6TA Datasheet - Page 3

• Manufacturer Part Number: ZXMN6A08E6TA
• Description: MOSFET N-CH 60V 2.5A SOT-23-6
• Manufacturer: Diodes Zetex

Specifications of ZXMN6A08E6TA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 5.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 459pF @ 40V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN6A08E6TR

Thermal Characteristics
ZXMN6A08E6
Document Number DS33376 Rev. 5 - 2
100m
10m
120
100
10
80
60
40
20
100m
100µ
1
Transient Thermal Impedance
R
Limited
Single Pulse
D=0.5
T
D=0.2
T
DS(on)
amb
amb
1m
V
=25°C
Safe Operating Area
=25°C
DS
DC
Drain-Source Voltage (V)
10m 100m
1s
Pulse Width (s)
100ms
1
10ms
D=0.1
1ms
1
D=0.05
100µs
Single Pulse
10
10
100
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100
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
100µ
1
0
20
Pulse Power Dissipation
1m
Diodes Incorporated
40
Temperature (°C)
10m 100m
Derating Curve
A Product Line of
Pulse Width (s)
60
80
1
100 120 140 160
25mm x 25mm
ZXMN6A08E6
Single Pulse
10
T
1oz FR4
amb
=25°C
100
© Diodes Incorporated
August 2010
1k