ZXMN2A03E6TA Diodes Zetex, ZXMN2A03E6TA Datasheet - Page 4

• Manufacturer Part Number: ZXMN2A03E6TA
• Description: MOSFET N-CH 20V 3.6A SOT-23-6
• Manufacturer: Diodes Zetex

Specifications of ZXMN2A03E6TA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 55 mOhm @ 7.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 8.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 837pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN2A03E6TR

ELECTRICAL CHARACTERISTICS
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN2A03E6
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (1)(3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
(at T
SYMBOL
V (BR)DSS
I DSS
I GSS
V GS(th)
R DS(on)
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
V SD
t rr
Q rr
A
= 25°C unless otherwise stated).
4
MIN.
0.7
20
TYP.
18.5
10.5
0.85
837
168
4.7
5.7
8.2
2.3
2.0
4.9
13
90
12
MAX. UNIT CONDITIONS.
0.055
0.100
0.95
100
1
V
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
A
ISSUE 4 - SEPTEMBER 2005
I D =250µA, V GS =0V
V DS =20V, V GS =0V
I
V GS =4.5V, I D =7.2A
V GS =2.5V, I D =4.6A
V DS =10V,I D =7.2A
V DS =10 V, V GS =0V,
f=1MHz
V DD =10V, I D =1A
R G =6.0Ω, V GS =4.5V
V DS =10V,V GS =4.5V,
I
T J =25°C, I S =4.1A,
V GS =0V
T J =25°C, I F =1.9A,
di/dt= 100A/µs
V GS = 12V, V DS =0V
D
D
=7.2A
=250µA, V DS = V GS