ZXMN2B14FHTA Diodes Zetex, ZXMN2B14FHTA Datasheet

IC MOSFET N-CHAN 20V SOT23-3

ZXMN2B14FHTA

Manufacturer Part Number
ZXMN2B14FHTA
Description
IC MOSFET N-CHAN 20V SOT23-3
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMN2B14FHTA

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
55 mOhm @ 3.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.5A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 4.5V
Input Capacitance (ciss) @ Vds
872pF @ 10V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMN2B14FHTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN2B14FHTA
Manufacturer:
ZETEX
Quantity:
39 000
Part Number:
ZXMN2B14FHTA
Manufacturer:
DIODES/美台
Quantity:
20 000
Part Number:
ZXMN2B14FHTA/2B4
Manufacturer:
ZETEX
Quantity:
20 000
ZXMN2B14FH
20V SOT23 N-channel enhancement mode MOSFET
with low gate drive capability
Summary
Description
This new generation of trench MOSFETs from Zetex features low on-
resistance achievable with low gate drive.
Features
Applications
Ordering information
Device marking
2B4
Issue 2 - March 2007
© Zetex Semiconductors plc 2007
V
Device
ZXMN2B14FHTA
(BR)DSS
Low on-resistance
Fast switching speed
Low gate drive capability
SOT23 package
DC-DC converters
Power management functions
Disconnect switches
Motor control
20
0.055 @ V
0.075 @ V
0.100 @ V
R
DS(on)
Reel size
(inches)
GS
GS
GS
( )
= 4.5V
= 2.5V
= 1.8V
7
Tape width
I
(mm)
D
4.3
3.7
3.2
(A)
8
1
Quantity per reel
3,000
D
G
www.zetex.com
Top view
S
D
G
S

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ZXMN2B14FHTA Summary of contents

Page 1

... Applications • DC-DC converters • Power management functions • Disconnect switches • Motor control Ordering information Device Reel size (inches) ZXMN2B14FHTA 7 Device marking 2B4 Issue 2 - March 2007 © Zetex Semiconductors plc 2007 I (A) D 4.3 3.7 3.2 Tape width Quantity per reel ...

Page 2

Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current (c) Continuous source current (body diode) (b) Pulsed source current (body diode) (c) Power dissipation at T =25°C (a) amb Linear derating factor Power dissipation at ...

Page 3

Thermal characteristics Issue 2 - March 2007 © Zetex Semiconductors plc 2007 ZXMN2B14FH 3 www.zetex.com ...

Page 4

Electrical characteristics (at T Parameter Static Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state (*) resistance (*) (‡) Forward transconductance (‡) Dynamic Input capacitance Output capacitance Reverse transfer capacitance (†) (‡) Switching ...

Page 5

Typical characteristics Issue 2 - March 2007 © Zetex Semiconductors plc 2007 ZXMN2B14FH 5 www.zetex.com ...

Page 6

Typical characteristics Charge Basic gate charge waveform V DS 90% 10 d(on (on) Switching time waveforms Issue 2 - March 2007 © Zetex Semiconductors plc 2007 ...

Page 7

Package outline - SOT23 leads Dim. Millimeters Min. Max 1.12 A1 0.01 0.10 b 0.30 0.50 C 0.085 0.120 D 2.80 3.04 e 0.95 NOM Note: Controlling dimensions are in millimeters. ...

Page 8

Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

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