TP0610KL-TR1-E3 Vishay, TP0610KL-TR1-E3 Datasheet - Page 3

• Manufacturer Part Number: TP0610KL-TR1-E3
• Description: MOSFET P-CH 60V 270MA TO92-3
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of TP0610KL-TR1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 270mA
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 3nC @ 15V
• Power - Max: 800mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -270mA
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 6ohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -2.1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TP0610KL-TR1-E3TR

Document Number: 72712
S-40244—Rev. A, 16-Feb-04
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1000
100
15
12
10
20
16
12
9
6
3
0
1
8
4
0
0.00
0.0
0
V
I
GS
D
Source-Drain Diode Forward Voltage
T
On-Resistance vs. Drain Current
0.3
= 500 mA
J
= 0 V
V
200
= 125_C
0.3
SD
Q
− Source-to-Drain Voltage (V)
g
I
D
0.6
− Total Gate Charge (nC)
V
− Drain Current (mA)
GS
V
Gate Charge
400
0.6
GS
V
= 4.5 V
DS
= 5 V
0.9
= 30 V
600
T
0.9
V
J
T
GS
= −55_C
1.2
J
= 25_C
= 10 V
V
800
1.2
DS
1.5
= 48 V
1000
1.5
1.8
New Product
1.8
1.5
1.2
0.9
0.6
0.3
0.0
40
32
24
16
10
8
0
8
6
4
2
0
−50
0
0
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-Source Voltage
−25
V
GS
TP0610KL/BS250KL
V
5
2
V
T
GS
V
GS
J
DS
0
= 10 V @ 500 mA
= 0 V
− Junction Temperature (_C)
I
D
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
= 200 mA
25
Capacitance
10
4
Vishay Siliconix
50
V
GS
C
15
C
C
6
oss
75
iss
rss
= 4.5 V @ 25 mA
I
D
100
= 500 mA
www.vishay.com
20
8
125
150
25
10
3