ZXMN10A08G Diodes Zetex, ZXMN10A08G Datasheet - Page 2

• Manufacturer Part Number: ZXMN10A08G
• Description: MOSFET N-CHAN 100V SOT223
• Manufacturer: Diodes Zetex

Specifications of ZXMN10A08G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 3.2A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 7.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 405pF @ 50V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN10A08GTA; ZXMN10A08GTR

Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
(b) For a device surface mounted on FR4 PCB measured at t
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02,pulse width 300 s - pulse width limited by maximum junction
Issue 1 - June 2006
© Zetex Semiconductors plc 2006
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
Junction to ambient
Junction to ambient
conditions.
temperature.
(a)
(b)
(c)
amb
amb
=25°C
=25°C
@ V
@ V
@ V
(a)
(b)
GS
GS
GS
= 10V; T
= 10V; T
= 10V; T
(c)
(b)
amb
amb
amb
2
= 25°C
= 25°C
= 70°C
10 sec.
(b)
(a)
(b)
Symbol
Symbol
T
V
R
R
V
j
I
I
, T
P
P
DM
DSS
SM
I
I
GS
D
S
D
D
JA
JA
stg
ZXMN10A08G
-55 to +150
Limit
Limit
62.5
±20
100
2.9
2.3
2.0
3.9
11
11
16
31
32
5
2
www.zetex.com
mW/°C
mW/°C
°C/W
°C/W
Unit
Unit
°C
W
W
A
A
A
A
A
A
V
V