ZXMP10A17E6TA Diodes Zetex, ZXMP10A17E6TA Datasheet - Page 3

• Manufacturer Part Number: ZXMP10A17E6TA
• Description: MOSFET P-CH TRENCH -100V SOT23-6
• Manufacturer: Diodes Zetex

Specifications of ZXMP10A17E6TA

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 350 mOhm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 6.1nC @ 5V
• Input Capacitance (ciss) @ Vds: 424pF @ 50V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMP10A17E6TR

Thermal Characteristics
ZXMP10A17E6
Document Number DS32027 Rev. 3 - 2
100m
10m
100
10
80
60
40
20
100µ
1
0
Transient Thermal Impedance
R
Limited
T
Single Pulse
T
D=0.5
D=0.2
DS(on)
-V
amb
amb
DC
=25°C
1m
1
=25°C
DS
Safe Operating Area
1s
Drain-Source Voltage (V)
1 0 0 m s
10m 100m
Pulse Width (s)
10ms
10
1ms
1
D=0.1
D=0.05
Single Pulse
100us
10
100
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100
1k
3 of 8
100
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
100µ
1
0
Pulse Power Dissipation
1m
25
Diodes Incorporated
Derating Curve
10m 100m
Temperature (°C)
50
A Product Line of
Pulse Width (s)
75
1
100
Single Pulse
T
ZXMP10A17E6
amb
10
125
=25°C
100
© Diodes Incorporated
December 2009
150
1k