SI1450DH-T1-E3 Vishay, SI1450DH-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI1450DH-T1-E3
• Description: MOSFET N-CH 8V 6.04A SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1450DH-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 47 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 6.04A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 7.05nC @ 5V
• Input Capacitance (ciss) @ Vds: 535pF @ 4V
• Power - Max: 2.78W
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 8V
• On Resistance Rds(on): 69mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1450DH-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74275
S10-0646-Rev. B, 22-Mar-10
8
6
4
2
0
0
Package Limited
25
D
is based on T
T
C
Current Derating*
50
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
150
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0
25
T
C
50
- Case Temperature (°C)
Power Derating
75
Vishay Siliconix
Si1450DH
100
www.vishay.com
125
150
5