ZXMN3B14FTA Diodes Zetex, ZXMN3B14FTA Datasheet - Page 2

• Manufacturer Part Number: ZXMN3B14FTA
• Description: MOSFET N-CHAN 30V 3.5A SOT23-3
• Manufacturer: Diodes Zetex

Specifications of ZXMN3B14FTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 3.1A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.9A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 6.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 568pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN3B14FTA; ZXMN3B14FTR

ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature.
ZXMN3B14F
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ V
Pulsed Drain Current
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient
Junction to Ambient
S E M I C O N D U C T O R S
(c)
(a)
(b)
A
A
=25°C
=25°C
@ V
@ V
(a)
(b)
GS
GS
GS
= 4.5V; T
= 4.5V; T
= 4.5V; T
(c)
(b)
A
A
A
=25°C
=70°C
=25°C
5 sec.
(b)
(b)
(a)
2
SYMBOL
V
V
I
I
I
I
P
P
T
SYMBOL
R
R
D
DM
S
SM
D
D
j
DSS
GS
, T
JA
JA
stg
-55 to +150
VALUE
LIMIT
125
83
3.5
2.9
2.9
2.4
1.5
30
16
16
12
ISSUE 2 - JANUARY 2006
1
8
12
mW/°C
mW/°C
UNIT
°C/W
°C/W
UNIT
°C
W
W
V
V
A
A
A
A
A
A