DMP2066LSS-13 Diodes Inc, DMP2066LSS-13 Datasheet - Page 2

• Manufacturer Part Number: DMP2066LSS-13
• Description: MOSFET P-CH 20V 6.5A 8-SOIC
• Manufacturer: Diodes Inc

Specifications of DMP2066LSS-13

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 5.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Input Capacitance (ciss) @ Vds: 820pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: DMP2066LSSDITR

DMP2066LSS
Document number: DS31522 Rev. 1 - 2
0.01
Fig. 5 Normalized On-Resistance vs. Ambient Temperature
30
24
18
12
1.6
1.4
1.2
1.0
0.8
0.6
0.1
6
0
1
-50 -25
0
0
0.5
V , DRAIN-SOURCE VOLTAGE (V)
T , AMBIENT TEMPERATURE (°C)
I , DRAIN-SOURCE CURRENT (A)
vs. Drain Current and Gate Voltage
DS
Fig. 1 Typical Output Characteristic
D
A
1
6
Fig. 3 Typical On-Resistance
V
0
GS
1.5
V
= 10V
GS
25
= 2.5V
2
12
V
2.5
V
50
GS
GS
= 4.5V
= 10V
V
18
3
GS
V
75
I = 10A
GS
D
= 4.5V
V
3.5
= 10V
GS
V
100
GS
I = 5A
= 1.5V
D
V
V
= 4.5V
V
GS
24
4
GS
GS
= 3.0V
125 150
= 2.5V
= 2.0V
4.5
30
5
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Fig. 6 Gate Threshold Variation vs. Ambient Temperature
0.08
0.06
0.04
0.02
2.0
2.4
1.6
1.2
0.8
0.4
20
16
12
8
4
0
0
-50 -25
0
0
0
V
0.5
DS
V
T = 125°C
Fig. 2 Typical Transfer Characteristic
V
GS
T , AMBIENT TEMPERATURE (°C)
A
= 5.0V
vs. Drain Current and Temperature
GS
A
= 4.5V
6
T = 150°C
, GATE-SOURCE VOLTAGE (V)
Fig. 4 Typical On-Resistance
1
0
A
-I , DRAIN CURRENT (A)
I = 250µA
D
D
I = 1mA
1.5
D
25
12
T = -55°C
A
50
2
T = 25°C
A
T = 85°C
A
2.5
18
75
DMP2066LSS
100
T = 150°C
T = -55°C
3
T = 125°C
T = 85°C
T = 25°C
A
A
A
A
A
24
© Diodes Incorporated
125 150
3.5
August 2008
4
30