DMN4036LK3-13 Diodes Zetex, DMN4036LK3-13 Datasheet - Page 5

• Manufacturer Part Number: DMN4036LK3-13
• Description: MOSFET N-CH 40V 8.5A DPAK
• Manufacturer: Diodes Zetex

Specifications of DMN4036LK3-13

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 36 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 8.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 9.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 453pF @ 20V
• Power - Max: 2.12W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMN4036LK3-13DITR

Typical Characteristics
DMN4036LK3
Document number: DS32122 Rev. 2 - 2
1E-3
0.01
0.01
0.01
Typical Transfer Characteristics
0.1
0.1
0.1
On-Resistance v Drain Current
10
10
10
0.01
1
1
1
T = 25°C
T = 25°C
V
0.1
DS
1
V
V
T = 150°C
= 10V
DS
GS
Output Characteristics
0.1
Drain-Source Voltage (V)
Gate-Source Voltage (V)
I
D
2
Drain Current (A)
3V
10V
1
1
3
T = 25°C
3.5V
10
4
4V
10
4.5V
4.5V
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10V
4V
3.5V
3V
V
V
GS
GS
5
5 of 8
Normalised Curves v Temperature
Source-Drain Diode Forward Voltage
0.01
0.01
0.1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
10
10
1
1
-50
0.2
T = 150°C
0.1
V
V
Tj Junction Temperature (°C)
DS
T = 150°C
SD
Output Characteristics
0.4
Drain-Source Voltage (V)
0
Source-Drain Voltage (V)
Diodes Incorporated
A Product Line of
V
I
V
I
D
D
GS
GS
= 250uA
= 12A
1
= V
0.6
= 10V
50
10V
DS
Vgs = 0V
100
0.8
T = 25°C
DMN4036LK3
4V
10
R
DS(on)
V
3.5V
2.5V
2V
GS(th)
3V
V
© Diodes Incorporated
GS
150
1.0
March 2010