ZXMN2A14FTA Diodes Zetex, ZXMN2A14FTA Datasheet - Page 4
ZXMN2A14FTA
Manufacturer Part Number
ZXMN2A14FTA
Description
MOSFET N-CH 20V 3.4A SOT23-3
Manufacturer
Diodes Zetex
Datasheet
1.ZXMN2A14FTA.pdf
(8 pages)
Specifications of ZXMN2A14FTA
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 3.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.4A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
6.6nC @ 4.5V
Input Capacitance (ciss) @ Vds
544pF @ 10V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
UZXMN2A14FTA
ZXMN2A14FTR
ZXMN2A14FTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ZXMN2A14FTA
Manufacturer:
Diodes
Quantity:
42 000
Part Number:
ZXMN2A14FTA
Manufacturer:
ZETEX
Quantity:
20 000
Part Number:
ZXMN2A14FTA/214
Manufacturer:
ZETEX
Quantity:
20 000
ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Pulse width
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN2A14F
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance
Forward Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
S E M I C O N D U C T O R S
(3)
(1)
(2) (3)
(1)
(3)
(3)
(1) (3)
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
amb
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
gs
gd
rr
= 25°C unless otherwise stated)
300 s; duty cycle
4
MIN.
0.7
20
TYP.
16.6
0.85
11.4
544
132
9.4
4.0
5.3
9.5
6.6
1.2
2.1
4.6
85
2%.
0.060
0.110
MAX. UNIT CONDITIONS
0.95
100
1
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
nC
V
V
S
V
A
ISSUE 3 - SEPTEMBER 2007
I
V
I
V
V
V
V
f=1MHz
V
I
R
V
I
T
V
T
di/dt= 100A/ s
D
V
D
D
D
J
J
DS
GS
GS
DS
DS
DD
G
DS
GS
=3.4A
=250 A, V
=250 A, V
= 1A
GS
=25°C, I
=25°C, I
≅
=20V, V
=10V,I
= 10V, V
=10V,V
=4.5V, I
=2.5V, I
=0V
= 10V, V
= 12V, V
6.0
D
S
F
GS
=(1.7)A,
=(3.3)A,
=3.4A
GS
D
D
GS
GS
DS
=3.4A
=2.5A
GS
= 4.5V,
=0V
DS
=0V,
=0V
= V
= 4.5V
=0V
GS