DMN6068LK3-13 Diodes Zetex, DMN6068LK3-13 Datasheet - Page 4

• Manufacturer Part Number: DMN6068LK3-13
• Description: MOSFET N-CH 60V 6A DPAK
• Manufacturer: Diodes Zetex

Specifications of DMN6068LK3-13

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 68 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 10.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 502pF @ 30V
• Power - Max: 2.12W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMN6068LK3-13DITR

Electrical Characteristics
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 9)
Forward Transconductance (Notes 9 & 10)
Diode Forward Voltage (Note 9)
Reverse recovery time (Note 10)
Reverse recovery charge (Note 10)
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time (Note 11)
Turn-On Rise Time (Note 11)
Turn-Off Delay Time (Note 11)
Turn-Off Fall Time (Note 11)
Notes:
DMN6068LK3
Document Number DS32057 Rev 2 - 2
9. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
10. For design aid only, not subject to production testing.
11. Switching characteristics are independent of operating junction temperatures.
Characteristic
@T
A
= 25°C unless otherwise specified
Symbol
R
BV
V
DS (ON)
t
t
I
I
C
V
C
C
GS(th)
Q
Q
D(on)
D(off)
DSS
GSS
Q
Q
Q
g
t
oss
t
t
SD
rss
DSS
rr
iss
fs
gs
gd
r
f
rr
g
g
www.diodes.com
Min
4 of 9
1.0
60
⎯
⎯
⎯
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⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
19.7
0.98
45.7
27.1
5.55
10.3
10.8
11.9
Typ
145
929
502
1.6
3.5
3.6
8.7
⎯
⎯
⎯
⎯
⎯
0.068
0.100
±100
Max
1.15
0.5
3.0
⎯
⎯
⎯
⎯
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⎯
Diodes Incorporated
A Product Line of
Unit
μA
nA
nC
nC
nC
nC
nC
ns
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S
V
I
V
V
I
V
V
V
I
I
V
f= 1MHz
V
V
V
I
D
D
S
S
D
DS
GS
GS
GS
DS
DS
GS
GS
DD
= 250μA, V
= 12A, V
= 12A, di/dt= 100A/μs
= 12A, R
= 250μA, V
= 60V, V
= 15V, I
= 30V, V
= 30V, V
= ±20V, V
= 10V, I
= 4.5V, I
= 4.5V
= 10V
Test Condition
GS
G
DMN6068LK3
D
D
D
≅ 6.0Ω
GS
GS
GS
= 12A
= 12A
= 0V
DS
GS
= 6A
DS
= 0V
= 0V
= 10V
= V
= 0V
= 0V
V
I
© Diodes Incorporated
D
GS
DS
= 12A
January 2010
= 30V